All MOSFET. 2SJ451 Datasheet

 

2SJ451 Datasheet and Replacement


   Type Designator: 2SJ451
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 680 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: MPAK
 

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2SJ451 Datasheet (PDF)

 ..1. Size:111K  renesas
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2SJ451

2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)D31. SourceG2. Gate13. Drain2SNote: Marking is ZK. Absol

 9.1. Size:177K  sanyo
2sj455.pdf pdf_icon

2SJ451

2SJ455Ordering number : EN5441SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ455ApplicationsFeatures Low ON-state resistance. High-speed switching. Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SJ455-applied equipment. High density surface mount a

 9.2. Size:2127K  nec
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2SJ451

 9.3. Size:46K  hitachi
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2SJ451

2SJ450Silicon P-Channel MOS FETADE-208-3811st. EditionApplicationHigh speed power switchingFeatures Low on-resistance. Low drive power High speed switching 2.5 V gate drive device.OutlineUPAK1234D1. GateG2. Drain3. Source4. DrainSThis datasheet has been downloaded from http://www.digchip.com at this page2SJ450Absolute Maximum Rati

Datasheet: 2SJ361 , 2SJ362 , 2SJ363 , 2SJ364 , 2SJ365 , 2SJ368 , 2SJ387 , 2SJ399 , 18N50 , 2SJ48 , 2SJ49 , 2SJ50 , 2SJ574 , 2SJ576 , 2SJ590LS , 2SJ601 , 2SJ601Z .

History: FTK2N65P

Keywords - 2SJ451 MOSFET datasheet

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