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2SJ451 Specs and Replacement


   Type Designator: 2SJ451
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 680 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: MPAK
 

 2SJ451 substitution

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2SJ451 Specs

 ..1. Size:111K  renesas
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2SJ451

2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) D 3 1. Source G 2. Gate 1 3. Drain 2 S Note Marking is ZK . Absol... See More ⇒

 9.1. Size:177K  sanyo
 2sj455.pdf pdf_icon

2SJ451

2SJ455 Ordering number EN5441 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ455 Applications Features Low ON-state resistance. High-speed switching. Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SJ455-applied equipment. High density surface mount a... See More ⇒

 9.2. Size:2127K  nec
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2SJ451

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 9.3. Size:46K  hitachi
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2SJ451

2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st. Edition Application High speed power switching Features Low on-resistance. Low drive power High speed switching 2.5 V gate drive device. Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S This datasheet has been downloaded from http //www.digchip.com at this page 2SJ450 Absolute Maximum Rati... See More ⇒

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Detailed specifications: 2SJ361 , 2SJ362 , 2SJ363 , 2SJ364 , 2SJ365 , 2SJ368 , 2SJ387 , 2SJ399 , BS170 , 2SJ48 , 2SJ49 , 2SJ50 , 2SJ574 , 2SJ576 , 2SJ590LS , 2SJ601 , 2SJ601Z .

Keywords - 2SJ451 MOSFET specs

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