All MOSFET. 2SJ451 Datasheet

 

2SJ451 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ451

SMD Transistor Code: ZK-

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.15 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 680 nS

Drain-Source Capacitance (Cd): 31 pF

Maximum Drain-Source On-State Resistance (Rds): 2.3 Ohm

Package: MPAK

2SJ451 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ451 Datasheet (PDF)

1.1. 2sj451.pdf Size:111K _renesas

2SJ451
2SJ451

2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1. Source G 2. Gate 1 3. Drain 2 S Note: Marking is ZK. Absolute Maximum Ratin

5.1. 2sj45.pdf Size:2127K _nec

2SJ451
2SJ451



5.2. 2sj450.pdf Size:46K _hitachi

2SJ451
2SJ451

2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st. Edition Application High speed power switching Features • Low on-resistance. • Low drive power • High speed switching • 2.5 V gate drive device. Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S This datasheet has been downloaded from http://www.digchip.com at this page 2SJ450 Absolute Maximum Rati

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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