All MOSFET. 2SJ451 Datasheet

 

2SJ451 Datasheet and Replacement


   Type Designator: 2SJ451
   Marking Code: ZK-
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 680 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: MPAK
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2SJ451 Datasheet (PDF)

 ..1. Size:111K  renesas
 2sj451.pdf pdf_icon

2SJ451

2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)D31. SourceG2. Gate13. Drain2SNote: Marking is ZK. Absol

 9.1. Size:177K  sanyo
 2sj455.pdf pdf_icon

2SJ451

2SJ455Ordering number : EN5441SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ455ApplicationsFeatures Low ON-state resistance. High-speed switching. Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SJ455-applied equipment. High density surface mount a

 9.2. Size:2127K  nec
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2SJ451

 9.3. Size:46K  hitachi
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2SJ451

2SJ450Silicon P-Channel MOS FETADE-208-3811st. EditionApplicationHigh speed power switchingFeatures Low on-resistance. Low drive power High speed switching 2.5 V gate drive device.OutlineUPAK1234D1. GateG2. Drain3. Source4. DrainSThis datasheet has been downloaded from http://www.digchip.com at this page2SJ450Absolute Maximum Rati

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