2SJ49 Datasheet and Replacement
Type Designator: 2SJ49
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 140 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO3
2SJ49 substitution
2SJ49 Datasheet (PDF)
2sj48 2sj49 2sj50.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sj499.pdf

Ordering number : ENN65892SJ499P-Channel Silicon MOSFET2SJ499Load Switching ApplicationsFeatures Package Dimensions Low ON-state resistance. unit : mm 4V drive. 2083B[2SJ499]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SJ499]6.5 2.35.0 0.540.50.851 2 30.6 1 : Gat
2sj496.pdf

2SJ496 Silicon P Channel MOS FET REJ03G0870-0300 (Previous: ADE-208-482A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D
2sj495.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: 2SJ363 , 2SJ364 , 2SJ365 , 2SJ368 , 2SJ387 , 2SJ399 , 2SJ451 , 2SJ48 , IRFP250 , 2SJ50 , 2SJ574 , 2SJ576 , 2SJ590LS , 2SJ601 , 2SJ601Z , 2SJ74 , 2SK1016 .
History: DH025N04
Keywords - 2SJ49 MOSFET datasheet
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History: DH025N04



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