2SK1082 Specs and Replacement
Type Designator: 2SK1082
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: SC65
2SK1082 substitution
- MOSFET ⓘ Cross-Reference Search
2SK1082 datasheet
2sk1082.pdf
isc N-Channel MOSFET Transistor 2SK1082 DESCRIPTION Drain Current I =6A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 9... See More ⇒
Detailed specifications: 2SJ50, 2SJ574, 2SJ576, 2SJ590LS, 2SJ601, 2SJ601Z, 2SJ74, 2SK1016, 20N50, 2SK1086, 2SK1093, 2SK1094, 2SK1095, 2SK1096-MR, 2SK1098-M, 2SK1099, 2SK1117
Keywords - 2SK1082 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: XGP6510B
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