2SK1096-MR
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1096-MR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08
Ohm
Package:
SC67
2SK1096-MR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1096-MR
Datasheet (PDF)
8.2. Size:178K fuji
2sk1098-m.pdf 
N-channel MOS-FET2SK1098-MF-III Series 150V 0,5 6A 30W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),
8.3. Size:20K hitachi
2sk1093.pdf
2SK1093Silicon N-Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low on-resistance21 High speed switching23 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter,1. Gatepower switch and solenoid drive2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta
8.4. Size:19K hitachi
2sk1094.pdf
2SK1094Silicon N-Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low on-resistance2 High speed switching 123 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter,1. Gatepower switch and solenoid drive2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta
8.5. Size:19K hitachi
2sk1095.pdf
2SK1095Silicon N-Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low on-resistance212 High speed switching3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter,1. Gatepower switch and solenoid drive2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta
8.6. Size:204K inchange semiconductor
2sk1099.pdf
isc N-Channel MOSFET Transistor 2SK1099DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
8.7. Size:252K inchange semiconductor
2sk1093.pdf
isc N-Channel MOSFET Transistor 2SK1093FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
8.8. Size:252K inchange semiconductor
2sk1094.pdf
isc N-Channel MOSFET Transistor 2SK1094FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
8.9. Size:226K inchange semiconductor
2sk1095.pdf
isc N-Channel \MOSFET Transistor 2SK1095FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
Datasheet: 2SJ601Z
, 2SJ74
, 2SK1016
, 2SK1082
, 2SK1086
, 2SK1093
, 2SK1094
, 2SK1095
, NCEP15T14
, 2SK1098-M
, 2SK1099
, 2SK1117
, 2SK1118
, 2SK1153
, 2SK1154
, 2SK1157
, 2SK1161
.
