2SK1096-MR
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK1096-MR
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 30
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 13
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 30
ns
Cossⓘ - Выходная емкость: 200
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08
Ohm
Тип корпуса:
SC67
Аналог (замена) для 2SK1096-MR
-
подбор ⓘ MOSFET транзистора по параметрам
2SK1096-MR
Datasheet (PDF)
8.2. Size:178K fuji
2sk1098-m.pdf 

N-channel MOS-FET2SK1098-MF-III Series 150V 0,5 6A 30W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),
8.3. Size:20K hitachi
2sk1093.pdf 

2SK1093Silicon N-Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low on-resistance21 High speed switching23 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter,1. Gatepower switch and solenoid drive2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta
8.4. Size:19K hitachi
2sk1094.pdf 

2SK1094Silicon N-Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low on-resistance2 High speed switching 123 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter,1. Gatepower switch and solenoid drive2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta
8.5. Size:19K hitachi
2sk1095.pdf 

2SK1095Silicon N-Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low on-resistance212 High speed switching3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter,1. Gatepower switch and solenoid drive2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta
8.6. Size:204K inchange semiconductor
2sk1099.pdf 

isc N-Channel MOSFET Transistor 2SK1099DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
8.7. Size:252K inchange semiconductor
2sk1093.pdf 

isc N-Channel MOSFET Transistor 2SK1093FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
8.8. Size:252K inchange semiconductor
2sk1094.pdf 

isc N-Channel MOSFET Transistor 2SK1094FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
8.9. Size:226K inchange semiconductor
2sk1095.pdf 

isc N-Channel \MOSFET Transistor 2SK1095FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
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