2SK1098-M Datasheet and Replacement
Type Designator: 2SK1098-M
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 6
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 100
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33
Ohm
Package:
TO220F15
-
MOSFET ⓘ Cross-Reference Search
2SK1098-M Datasheet (PDF)
..1. Size:178K fuji
2sk1098-m.pdf 
N-channel MOS-FET2SK1098-MF-III Series 150V 0,5 6A 30W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),
8.3. Size:20K hitachi
2sk1093.pdf 
2SK1093Silicon N-Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low on-resistance21 High speed switching23 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter,1. Gatepower switch and solenoid drive2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta
8.4. Size:19K hitachi
2sk1094.pdf 
2SK1094Silicon N-Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low on-resistance2 High speed switching 123 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter,1. Gatepower switch and solenoid drive2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta
8.5. Size:19K hitachi
2sk1095.pdf 
2SK1095Silicon N-Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low on-resistance212 High speed switching3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter,1. Gatepower switch and solenoid drive2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta
8.6. Size:204K inchange semiconductor
2sk1099.pdf 
isc N-Channel MOSFET Transistor 2SK1099DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
8.7. Size:252K inchange semiconductor
2sk1093.pdf 
isc N-Channel MOSFET Transistor 2SK1093FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
8.8. Size:252K inchange semiconductor
2sk1094.pdf 
isc N-Channel MOSFET Transistor 2SK1094FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
8.9. Size:226K inchange semiconductor
2sk1095.pdf 
isc N-Channel \MOSFET Transistor 2SK1095FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
Datasheet: 2SJ74
, 2SK1016
, 2SK1082
, 2SK1086
, 2SK1093
, 2SK1094
, 2SK1095
, 2SK1096-MR
, K2611
, 2SK1099
, 2SK1117
, 2SK1118
, 2SK1153
, 2SK1154
, 2SK1157
, 2SK1161
, 2SK1165
.
History: HGB110N20S
Keywords - 2SK1098-M MOSFET datasheet
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2SK1098-M equivalent finder
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2SK1098-M replacement