All MOSFET. 2SK1669 Datasheet

 

2SK1669 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1669
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 1330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO3P

 2SK1669 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1669 Datasheet (PDF)

 ..1. Size:82K  renesas
2sk1669.pdf

2SK1669
2SK1669

2SK1669 Silicon N Channel MOS FET REJ03G0966-0200 (Previous: ADE-208-1310) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC-DC converter Outline RENESAS Package code: PRSS

 8.1. Size:81K  renesas
2sk1668.pdf

2SK1669
2SK1669

2SK1668 Silicon N Channel MOS FET REJ03G0965-0200 (Previous: ADE-208-1309) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)

 8.2. Size:80K  renesas
2sk1667.pdf

2SK1669
2SK1669

2SK1667 Silicon N Channel MOS FET REJ03G0964-0200 (Previous: ADE-208-1308) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)

 8.3. Size:443K  nec
2sk1664.pdf

2SK1669
2SK1669

 8.4. Size:87K  no
2sk1662m.pdf

2SK1669

 8.5. Size:209K  inchange semiconductor
2sk1662.pdf

2SK1669
2SK1669

isc N-Channel MOSFET Transistor 2SK1662DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

 8.6. Size:214K  inchange semiconductor
2sk1667.pdf

2SK1669
2SK1669

isc N-Channel MOSFET Transistor 2SK1667DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistanceHigh speed switchingLow drive currentNo secondary breakdownSuitable for switchingregulator,

 8.7. Size:63K  inchange semiconductor
2sk1660.pdf

2SK1669
2SK1669

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1660 DESCRIPTION Drain Current ID=10A@ TC=25 Drain Source Voltage- : VDSS=450 (Min) APPLICATIONS high voltage,high speed applications, such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) UNISYMBOL VALUE ARAMETER T VD

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CPH3355

 

 
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