2SK168 Specs and Replacement
Type Designator: 2SK168
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.02 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 125 Ohm
Package: TO92
2SK168 substitution
- MOSFET ⓘ Cross-Reference Search
2SK168 datasheet
2sk168.pdf
2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 2SK168 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Gate to drain voltage VGDO 30 V Gate to source voltage VGSS 1 V Gate current IG 10 mA Drain current ID 20 mA Channel power dissipation Pch 200 mW Channel temper... See More ⇒
Detailed specifications: 2SK1620S, 2SK1620L, 2SK1628, 2SK1636L, 2SK1636S, 2SK1667, 2SK1668, 2SK1669, IRF9540, 2SK1690, 2SK1691, 2SK1692, 2SK1693, 2SK1698, 2SK1736, 2SK1739A, 2SK1771
Keywords - 2SK168 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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