All MOSFET. 2SK1938-01R Datasheet

 

2SK1938-01R MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1938-01R

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 80 nS

Drain-Source Capacitance (Cd): 340 pF

Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm

Package: TO3PF

2SK1938-01R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1938-01R Datasheet (PDF)

3.1. 2sk1938.pdf Size:244K _fuji

2SK1938-01R
2SK1938-01R

FUJI POWER MOSFET 2SK1938-01R N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching 5.50.3 0.3 Low on-resistance 0.2 15.5 o3.2 3.2+0.3 No secondary breakdown Low driving power High voltage VGS=30V Guarantee Avalanche-proof 0.3 2.10.3 1.6 +0.2 1.10.1 0.2 3.5 0.2 0.2 Applications 5.45 5.45 0.6+0.2 Switching regulators 1. G

4.1. 2sk1930.pdf Size:381K _toshiba

2SK1938-01R
2SK1938-01R

2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSII.5) 2SK1930 Chopper Regulator, DC-DC Converter, and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 3.0 ? (typ.) High forward transfer admittance : |Y | = 2.0 S (typ.) fs Low leakage current : I = 300 µA (max) (V = 800 V) DSS DS Enhancement-mode : Vth = 1.5~3.5

4.2. 2sk1933.pdf Size:82K _renesas

2SK1938-01R
2SK1938-01R

2SK1933 Silicon N Channel MOS FET REJ03G0984-0300 (Previous: ADE-208-1332) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source 1 S 2 3

 4.3. 2sk1934.pdf Size:82K _renesas

2SK1938-01R
2SK1938-01R

2SK1934 Silicon N Channel MOS FET REJ03G0985-0200 (Previous: ADE-208-1333) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low onresistance High speed switching No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source 1 S 2 3

4.4. rej03g0984 2sk1933ds.pdf Size:96K _renesas

2SK1938-01R
2SK1938-01R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.5. 2sk193.pdf Size:53K _nec

2SK1938-01R
2SK1938-01R



4.6. 2sk1936-01.pdf Size:214K _fuji

2SK1938-01R
2SK1938-01R

N-channel MOS-FET 2SK1936-01 FAP-IIA Series 500V 0,76Ω 10A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva

4.7. 2sk1937-01.pdf Size:215K _fuji

2SK1938-01R
2SK1938-01R

N-channel MOS-FET 2SK1937-01 FAP-IIA Series 500V 0,48Ω 15A 125W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ

Datasheet: 2SK1920 , 2SK1921 , 2SK1922 , 2SK1923 , 2SK1924 , 2SK1925 , 2SK192A , 2SK1934 , IRF5305 , 2SK1947 , 2SK1948 , 2SK1957 , 2SK1968 , 2SK1971 , 2SK2007 , 2SK2008 , 2SK2038 .

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