2SK1971 MOSFET. Datasheet pdf. Equivalent

2SK1971 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK1971 Datasheet (PDF)

1.1. 2sk1971.pdf Size:82K _renesas

2SK1971 Silicon N Channel MOS FET REJ03G0990-0200 (Previous: ADE-208-1338) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � No secondary breakdown � Suitable for switching regulator, DC-DC converter, motor control Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D

4.1. 2sk1975.pdf Size:86K _upd



 5.1. 2sk1913.pdf Size:48K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1913 DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed APPLICATIONS ·High speed ,high current switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source V

5.2. 2sk1986-01.pdf Size:249K _update

FUJI POWER MOSFET 2SK1986-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC TO-220AB General purpose power amplifier EIAJ SC-46 Equivalent c

 5.3. 2sk1954-z.pdf Size:2263K _update

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.4. 2sk1929.pdf Size:539K _update



 5.5. 2sk1942-01.pdf Size:177K _update



5.6. 2sk1984-01mr.pdf Size:192K _update

2SK1984-01MR N-channel MOS-FET FAP-IIA Series 900V 4Ω 3A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equival

5.7. 2sk1985-01mr.pdf Size:138K _update



5.8. 2sk1915 2sk1927 2sk1928.pdf Size:98K _update



5.9. 2sk1944-01.pdf Size:264K _update

FUJI POWER MOSFET 2SK1944-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC General purpose power amplifier SC-65 EIAJ Equivalent circuit sche

5.10. 2sk1945-01l-01s.pdf Size:189K _update

N-channel MOS-FET 2SK1945-01L,S FAP-IIA Series 900V 2,8Ω 5A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ

5.11. 2sk1941-01r.pdf Size:126K _update

 N-channel MOS-FET 2SK1941-01R FAP-IIA Series 600V 0,55Ω 16A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > E

5.12. 2sk1943-01.pdf Size:278K _upd

FUJI POWER MOSFET 2SK1943-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC TO-220AB General purpose power amplifier EIAJ SC-46 Equivalent c

5.13. 2sk1952.pdf Size:189K _upd

2SK1952 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 2 1 2 • Low drive current 3 • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche ratings 3 Table 1 Absolute Maximum Ratings (

5.14. 2sk1949l-s.pdf Size:64K _upd

2SK1949(L), 2SK1949(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter • Avalanche ratings Outline DPAK-1 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3.

5.15. 2sk1930.pdf Size:381K _toshiba

2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSII.5) 2SK1930 Chopper Regulator, DC-DC Converter, and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 3.0 ? (typ.) High forward transfer admittance : |Y | = 2.0 S (typ.) fs Low leakage current : I = 300 µA (max) (V = 800 V) DSS DS Enhancement-mode : Vth = 1.5~3.5

5.16. 2sk192a.pdf Size:362K _toshiba

2SK192A TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications Unit: mm VHF Band Amplifier Applications • High power gain: GPS = 24dB (typ.) (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz) Maximum Ratings (Ta = = 25°C) = = Characteristics Sy

5.17. 2sk1925.pdf Size:115K _sanyo

Ordering number:ENN4314 N-Channel Silicon MOSFET 2SK1925 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2056A � High-speed diode (trr=150ns). [2SK1925] 15.6 3.2 4.8 14.0 2.0 1.6 2.0 0.6 1.0 1 2 3 1 : Gate 0.6 2 : Drain 3 : Source 5.45 5.45 SANYO : TO-3PB Specifications Absolute Maximum Ratin

5.18. 2sk1961.pdf Size:166K _sanyo

Ordering number:ENN4502 N-Channel Junction Silicon FET 2SK1961 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions � High-frequency low-noise amplifier applications. unit:mm 2019B Features [2SK1961] 5.0 � Adoption of FBET process. 4.0 4.0 � Large | yfs |. � Small Ciss. � Ultralow noise figure. 0.45 0.5 0.44 0.45 1 : Source 2 : Gate 3 : Drain

5.19. 2sk1907.pdf Size:96K _sanyo

Ordering number:EN4226 N-Channel Silicon MOSFET 2SK1907 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2093A � Low-voltage drive. [2SK1907] � Surface mount type device making the following 4.5 10.2 1.3 possible. � Reduction in the number of manufacturing pro- cesses for 2SK1907-applied equipment. �

5.20. 2sk1922.pdf Size:109K _sanyo

Ordering number:EN4311 N-Channel Silicon MOSFET 2SK1922 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2052C � High-speed diode (trr=100ns). [2SK1922] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 : Gate 1 2 3 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta

5.21. 2sk1904.pdf Size:95K _sanyo

Ordering number:EN4211 N-Channel Silicon MOSFET 2SK1904 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2063A � Low-voltage drive. [2SK1904] � Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

5.22. 2sk1920.pdf Size:93K _sanyo

Ordering number:EN4244A N-Channel Silicon MOSFET 2SK1920 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2083B � Low-voltage drive. [2SK1920] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SK1920] 6.5 2.3 5.0 0.5 4 0.5 0.85

5.23. 2sk1906.pdf Size:95K _sanyo

Ordering number:EN4225 N-Channel Silicon MOSFET 2SK1906 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2063A � Low-voltage drive. [2SK1906] � Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

5.24. 2sk1921.pdf Size:89K _sanyo

Ordering number:EN4310 N-Channel Silicon MOSFET 2SK1921 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2052C � Low-voltage drive. [2SK1921] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 : Gate 1 2 3 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Par

5.25. 2sk1924.pdf Size:114K _sanyo

Ordering number:EN4313 N-Channel Silicon MOSFET 2SK1924 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2052C � High-speed diode (trr=140ns). [2SK1924] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 : Gate 1 2 3 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta

5.26. 2sk1905.pdf Size:92K _sanyo

Ordering number:EN4649 N-Channel Silicon MOSFET 2SK1905 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2063A � Low-voltage drive. [2SK1905] � Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-

5.27. 2sk1909.pdf Size:98K _sanyo

Ordering number:EN4227 N-Channel Silicon MOSFET 2SK1909 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2093A � Low-voltage drive. [2SK1909] � Surface mount type device making the following 4.5 10.2 1.3 possible. � Reduction in the number of manufacturing pro- cesses for 2SK1909-applied equipment. �

5.28. 2sk1923.pdf Size:113K _sanyo

Ordering number:EN4312 N-Channel Silicon MOSFET 2SK1923 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2052C � High-speed diode (trr=120ns). [2SK1923] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 : Gate 1 2 3 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta

5.29. 2sk1908.pdf Size:94K _sanyo

Ordering number:EN4650 N-Channel Silicon MOSFET 2SK1908 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2090A � Low-voltage drive. [2SK1908] � Surface mount type device making the following 10.2 4.5 1.3 possible. � Reduction in the number of manufacturing pro- cesses for 2SK1908-applied equipment. �

5.30. 2sk1900.pdf Size:99K _sanyo

Ordering number:EN4210 N-Channel Silicon MOSFET 2SK1900 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2093A � Low-voltage drive. [2SK1900] � Surface mount type device making the following 4.5 10.2 1.3 possible. � Reduction in the number of manufacturing pro- cesses for 2SK1900-applied equipment. �

5.31. 2sk1933.pdf Size:82K _renesas

2SK1933 Silicon N Channel MOS FET REJ03G0984-0300 (Previous: ADE-208-1332) Rev.3.00 Apr 27, 2006 Application High speed power switching Features � Low on-resistance � High speed switching � No secondary breakdown � Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source 1 S 2 3

5.32. 2sk1957.pdf Size:81K _renesas

2SK1957 Silicon N Channel MOS FET REJ03G0988-0200 (Previous: ADE-208-1336) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � No secondary breakdown � Suitable for switching regulator, DC-DC converter, motor control Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)

5.33. 2sk1934.pdf Size:82K _renesas

2SK1934 Silicon N Channel MOS FET REJ03G0985-0200 (Previous: ADE-208-1333) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on�resistance � High speed switching � No secondary breakdown � Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source 1 S 2 3

5.34. 2sk1947.pdf Size:82K _renesas

2SK1947 Silicon N Channel MOS FET REJ03G0986-0200 (Previous: ADE-208-1334) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � Built-in fast recovery diode (trr = 140 ns) � Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL)

5.35. 2sk1948.pdf Size:81K _renesas

2SK1948 Silicon N Channel MOS FET REJ03G0987-0200 (Previous: ADE-208-1335) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � No secondary breakdown � Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D 1. Gate G 2. D

5.36. rej03g0984 2sk1933ds.pdf Size:96K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.37. 2sk1968.pdf Size:82K _renesas

2SK1968 Silicon N Channel MOS FET REJ03G0989-0200 (Previous: ADE-208-1337) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � No secondary breakdown � Suitable for switching regulator � Low drive current Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange)

5.38. 2sk193.pdf Size:53K _nec



5.39. 2sk195.pdf Size:54K _nec



5.40. 2sk1967.pdf Size:33K _panasonic

Power F-MOS FETs 2SK1967 2SK1967 Silicon N-Channel Power F-MOS Unit : mm Features Low-voltage drive possible 3.4� 0.3 8.5� 0.2 6.0� 0.5 1.0� 0.1 High-speed switching : tf =180ns No secondary breakdown Applications 1.5max. 1.1max. Solenoid drive Motor drive 0.8� 0.1 0.5max. Control equipment 2.54� 0.3 Switching mode regulator 5.08� 0.5 1 2 3 1 : Gate Absolute Maximum Rati

5.41. 2sk1980.pdf Size:31K _panasonic

Power F-MOS FETs 2SK1980 2SK1980 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed : EAS > 15mJ 3.4� 0.3 8.5� 0.2 6.0� 0.5 1.0� 0.1 VGSS=�30V guaranteed High-speed switching : tf= 25ns No secondary breakdown 1.5max. 1.1max. Applications Non-contact relay 0.8� 0.1 0.5max. Solenoid drive 2.54� 0.3 Motor drive 5.08� 0.5 Control equipment

5.42. 2sk198.pdf Size:31K _panasonic

Silicon Junction FETs (Small Signal) 2SK198 2SK198 Silicon N-Channel Junction Unit : mm For low-frequency amplification +0.2 2.8 �0.3 +0.25 0.65� 0.15 1.5 �0.05 0.65� 0.15 Features High mutual conductance gm 1 Low noise type Downsizing of sets by mini-type package and automatic insertion by 3 taping/magazine packing are available. 2 Absolute Maximum Ratings (Ta = 25?C) Param

5.43. 2sk1940.pdf Size:210K _fuji

N-channel MOS-FET 2SK1940-01 FAP-IIA Series 600V 0,75Ω 12A 125W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva

5.44. 2sk1938.pdf Size:244K _fuji

FUJI POWER MOSFET 2SK1938-01R N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching 5.5�0.3 �0.3 Low on-resistance �0.2 15.5 o3.2 3.2+0.3 No secondary breakdown Low driving power High voltage VGS=�30V Guarantee Avalanche-proof �0.3 2.1�0.3 1.6 +0.2 1.1�0.1 �0.2 3.5 �0.2 �0.2 Applications 5.45 5.45 0.6+0.2 Switching regulators 1. G

5.45. 2sk1936-01.pdf Size:214K _fuji

N-channel MOS-FET 2SK1936-01 FAP-IIA Series 500V 0,76Ω 10A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva

5.46. 2sk1916-01r.pdf Size:177K _fuji



5.47. 2sk1937-01.pdf Size:215K _fuji

N-channel MOS-FET 2SK1937-01 FAP-IIA Series 500V 0,48Ω 15A 125W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ

5.48. 2sk1959.pdf Size:943K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1959 1.70 0.1 ■ Features ● VDS (V) = 16V ● ID = 2A Drain (D) ● RDS(ON) ＜ 3.2Ω (VGS = 1.5V) 0.42 0.1 0.46 0.1 ● RDS(ON) ＜ 0.5Ω (VGS = 4V) Internal Gate (G) diode Gate 1.Gate protection 2.Drain diode 3.Source Source (S) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 16

5.49. 2sk1960.pdf Size:973K _kexin

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET 2SK1960 Features 1.70 0.1 Gate can be driven by 1.5V Low ON resistance RDS(on)=0.8 MAX.@VGS=1.5V,ID=0.1A RDS(on)=0.2 MAX.@VGS=4.0V,ID=1.5A 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS ±7 Continuous Drai

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