All MOSFET. FDS9936A Datasheet

 

FDS9936A Datasheet and Replacement


   Type Designator: FDS9936A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SO8
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FDS9936A Datasheet (PDF)

 8.1. Size:162K  fairchild semi
fds9934c.pdf pdf_icon

FDS9936A

March 2006FDS9934CComplementary FeaturesThese dual N- and P-Channel enhancement mode Q1: 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 Vpower field effect transistors are produced usingRDS(ON) = 43 m @ VGS = 2.5 V.Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimizeon-state ressitance and yet maintain superior switchingperf

 8.2. Size:292K  fairchild semi
fds9933bz.pdf pdf_icon

FDS9936A

March 2008FDS9933BZtmDual P-Channel 2.5V Specified PowerTrench MOSFET -20V, -4.9A, 46mFeatures General Description Max rDS(on) = 46m at VGS = -4.5V, ID = -4.9A These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 69m at VGS = -2.5V, ID = -4.0Athat has been especially tailored to minimize

 8.3. Size:367K  fairchild semi
fds9933.pdf pdf_icon

FDS9936A

September 2006FDS9933 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5 A, 20 V, RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 90 m @ VGS = 2.5 V process. It has been optimized for power management applications with a wide range of ga

 8.4. Size:63K  fairchild semi
fds9933a.pdf pdf_icon

FDS9936A

November 1998FDS9933ADual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced -3.8 A, -20 V. RDS(on) = 0.075 @ VGS = -4.5 Vusing Fairchild Semiconductor's advanced PowerTrenchRDS(on) = 0.105 @ VGS = -2.5 V.process that has been especially tailored to minimize theon-state resistance and yet ma

Datasheet: FDS8433A , FDS8926A , FDS8934A , FDS8936A , FDS8947A , FDS9412 , FDS9435A , FDS9933A , P0903BDG , FDT439N , FDT457N , FDT459N , FDV301N , FDV302P , FDV303N , FDV304P , FK10KM-10 .

History: HFS8N70S | CJD04N60A | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

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