FDS9936A. Аналоги и основные параметры

Наименование производителя: FDS9936A

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm

Тип корпуса: SO8

Аналог (замена) для FDS9936A

- подборⓘ MOSFET транзистора по параметрам

 

FDS9936A даташит

 8.1. Size:162K  fairchild semi
fds9934c.pdfpdf_icon

FDS9936A

March 2006 FDS9934C Complementary Features These dual N- and P-Channel enhancement mode Q1 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V power field effect transistors are produced using RDS(ON) = 43 m @ VGS = 2.5 V. Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching perf

 8.2. Size:292K  fairchild semi
fds9933bz.pdfpdf_icon

FDS9936A

March 2008 FDS9933BZ tm Dual P-Channel 2.5V Specified PowerTrench MOSFET -20V, -4.9A, 46m Features General Description Max rDS(on) = 46m at VGS = -4.5V, ID = -4.9A These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process Max rDS(on) = 69m at VGS = -2.5V, ID = -4.0A that has been especially tailored to minimize

 8.3. Size:367K  fairchild semi
fds9933.pdfpdf_icon

FDS9936A

September 2006 FDS9933 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5 A, 20 V, RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 90 m @ VGS = 2.5 V process. It has been optimized for power management applications with a wide range of ga

 8.4. Size:63K  fairchild semi
fds9933a.pdfpdf_icon

FDS9936A

November 1998 FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced -3.8 A, -20 V. RDS(on) = 0.075 @ VGS = -4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(on) = 0.105 @ VGS = -2.5 V. process that has been especially tailored to minimize the on-state resistance and yet ma

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