Справочник MOSFET. FDS9936A

 

FDS9936A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDS9936A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: SO8
 

 Аналог (замена) для FDS9936A

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDS9936A Datasheet (PDF)

 8.1. Size:162K  fairchild semi
fds9934c.pdfpdf_icon

FDS9936A

March 2006FDS9934CComplementary FeaturesThese dual N- and P-Channel enhancement mode Q1: 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 Vpower field effect transistors are produced usingRDS(ON) = 43 m @ VGS = 2.5 V.Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimizeon-state ressitance and yet maintain superior switchingperf

 8.2. Size:292K  fairchild semi
fds9933bz.pdfpdf_icon

FDS9936A

March 2008FDS9933BZtmDual P-Channel 2.5V Specified PowerTrench MOSFET -20V, -4.9A, 46mFeatures General Description Max rDS(on) = 46m at VGS = -4.5V, ID = -4.9A These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 69m at VGS = -2.5V, ID = -4.0Athat has been especially tailored to minimize

 8.3. Size:367K  fairchild semi
fds9933.pdfpdf_icon

FDS9936A

September 2006FDS9933 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5 A, 20 V, RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 90 m @ VGS = 2.5 V process. It has been optimized for power management applications with a wide range of ga

 8.4. Size:63K  fairchild semi
fds9933a.pdfpdf_icon

FDS9936A

November 1998FDS9933ADual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced -3.8 A, -20 V. RDS(on) = 0.075 @ VGS = -4.5 Vusing Fairchild Semiconductor's advanced PowerTrenchRDS(on) = 0.105 @ VGS = -2.5 V.process that has been especially tailored to minimize theon-state resistance and yet ma

Другие MOSFET... FDS8433A , FDS8926A , FDS8934A , FDS8936A , FDS8947A , FDS9412 , FDS9435A , FDS9933A , P60NF06 , FDT439N , FDT457N , FDT459N , FDV301N , FDV302P , FDV303N , FDV304P , FK10KM-10 .

History: STP20N10LFI

 

 
Back to Top

 


 
.