AP01L60AT PDF and Equivalents Search

 

AP01L60AT Specs and Replacement

Type Designator: AP01L60AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 30.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm

Package: TO92

AP01L60AT substitution

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AP01L60AT datasheet

 ..1. Size:105K  ape
ap01l60at.pdf pdf_icon

AP01L60AT

AP01L60AT RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 160mA G S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effe... See More ⇒

 7.1. Size:86K  ape
ap01l60t-h-hf.pdf pdf_icon

AP01L60AT

AP01L60T-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 700V D Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mA G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistan... See More ⇒

 7.2. Size:62K  ape
ap01l60h-a-hf ap01l60j-a-hf.pdf pdf_icon

AP01L60AT

AP01L60H/J-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 650V D Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for commercial-industrial G surface mount applications and suited for AC/... See More ⇒

 7.3. Size:92K  ape
ap01l60t.pdf pdf_icon

AP01L60AT

AP01L60T RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 160mA G S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effect... See More ⇒

Detailed specifications: 2SK2568, 2SK2569, 2SK2595, 2SK2596, 2SK2633LS, 2SK2700, AP0103GMT-HF, AP0103GP-HF, IRF1404, AP01L60H-HF, AP01L60J-HF, AP01L60T, AP01L60T-H-HF, AP01N15GK-HF, AP01N40G-HF, AP01N40J-HF, AP01N40H-HF

Keywords - AP01L60AT MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


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