AP01N60H-HF Datasheet and Replacement
Type Designator: AP01N60H-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 25 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: TO252
AP01N60H-HF substitution
AP01N60H-HF Datasheet (PDF)
ap01n60hj-hf.pdf

AP01N60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount ap
ap01n60p.pdf

AP01N60PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Dynamic dv/dt Rating BVDSS 600V Repetitive Avalanche Rated RDS(ON) 8 Fast Switching ID 1.6A Simple Drive Requirement GDTO-220S RoHS CompliantDescriptionDThe TO-220 package is universally preferred for all commercial-industrial applications. The de
ap01n60j.pdf

AP01N60J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSDescriptionGDS TO-251(J)AP01N60 series are from Advanced Power innovated design andsilicon process technology
Datasheet: AP01L60H-HF , AP01L60J-HF , AP01L60T , AP01L60T-H-HF , AP01N15GK-HF , AP01N40G-HF , AP01N40J-HF , AP01N40H-HF , IRFB4110 , AP01N60J-HF , 2SK2740 , 2SK2791 , 2SK2792 , 2SK2793 , 2SK2795 , 2SK2845 , 2SK2854 .
Keywords - AP01N60H-HF MOSFET datasheet
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