2SK3116 MOSFET Datasheet: N-Ch, 600V, 7.5A. Full specification with pinout and replacement list

2SK3116 Specs and Replacement

Type Designator: 2SK3116

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO220AB

2SK3116 substitution

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2SK3116 datasheet

..1. Size:70K nec
2sk3116.pdf pdf_icon

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3116 is N-channel DMOS FET device that features a PART NUMBER PACKAGE low gate charge and excellent switching characteristics, and 2SK3116 TO-220AB designed for high voltage applications such as switching power 2SK3116-S TO-262 supply, AC adapter. 2SK3116-ZJ TO-... See More ⇒

..2. Size:288K inchange semiconductor
2sk3116.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3116 FEATURES Drain Current I = 7.5A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Static Drain-Source On-Resistance R =1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO... See More ⇒

0.1. Size:265K renesas
2sk3116b.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

0.2. Size:357K inchange semiconductor
2sk3116-zj.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3116-ZJ FEATURES Drain Current I = 7.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒