2SK3116 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3116
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 70 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Минимальное напряжение отсечки |Vgs(off)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 7.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 26 nC
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 200 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.9 Ohm
Тип корпуса: TO220AB
2SK3116 Datasheet (PDF)
2sk3116.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3116SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3116 is N-channel DMOS FET device that features aPART NUMBER PACKAGElow gate charge and excellent switching characteristics, and2SK3116 TO-220ABdesigned for high voltage applications such as switching power2SK3116-S TO-262supply, AC adapter.2SK3116-ZJ TO-
2sk3116.pdf
isc N-Channel MOSFET Transistor 2SK3116FEATURESDrain Current : I = 7.5A@ T =25D CDrain Source Voltage: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO
2sk3116b.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3116-zj.pdf
isc N-Channel MOSFET Transistor 2SK3116-ZJFEATURESDrain Current : I = 7.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3116-s.pdf
isc N-Channel MOSFET Transistor 2SK3116-SFEATURESDrain Current : I = 7.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
