All MOSFET. AP08P20GP-HF Datasheet

 

AP08P20GP-HF Datasheet and Replacement


   Type Designator: AP08P20GP-HF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
   Package: TO220
 

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AP08P20GP-HF Datasheet (PDF)

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AP08P20GP-HF

AP08P20GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS -200V Simple Drive Requirement RDS(ON) 680m Fast Switching Characteristic ID -8AG RoHS Compliant & Halogen-FreeSDescriptionAP08P20 series are from Advanced Power innovated designand silicon process technology to achieve the low

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AP08P20GP-HF

AP08P20GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -200V Simple Drive Requirement RDS(ON) 680m Fast Switching Characteristic ID -8AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast switching,

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2N6961 | IRF710S

Keywords - AP08P20GP-HF MOSFET datasheet

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