AP08P20GP-HF Specs and Replacement
Type Designator: AP08P20GP-HF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
Package: TO220
AP08P20GP-HF substitution
- MOSFET ⓘ Cross-Reference Search
AP08P20GP-HF datasheet
ap08p20gp.pdf
AP08P20GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -200V Simple Drive Requirement RDS(ON) 680m Fast Switching Characteristic ID -8A G RoHS Compliant & Halogen-Free S Description AP08P20 series are from Advanced Power innovated design and silicon process technology to achieve the low... See More ⇒
ap08p20gs p-hf.pdf
AP08P20GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -200V Simple Drive Requirement RDS(ON) 680m Fast Switching Characteristic ID -8A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast switching, ... See More ⇒
Detailed specifications: AP0603GH-HF, AP0603GM-HF, AP06P20GJ-HF, AP0704GMT-HF, AP07N70CI-H, AP0803GMP-HF, AP0803GMT-HF, AP08N60I-HF, RFP50N06, AP08P20GS-HF, AP0903GH-HF, AP0903GM-HF, AP0903GYT-HF, AP0904GH-HF, AP0904GJB-HF, AP0904GJ-HF, AP0904GMT-HF
Keywords - AP08P20GP-HF MOSFET specs
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