AP09N20BGI-HF Specs and Replacement

Type Designator: AP09N20BGI-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm

Package: TO220F

AP09N20BGI-HF substitution

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AP09N20BGI-HF datasheet

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 ap09n20bgi-hf.pdf pdf_icon

AP09N20BGI-HF

AP09N20BGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G r... See More ⇒

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 ap09n20bgh-hf.pdf pdf_icon

AP09N20BGI-HF

AP09N20BGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of f... See More ⇒

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 ap09n20bgh.pdf pdf_icon

AP09N20BGI-HF

AP09N20BGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description AP09N20B series are from Advanced Power innovated design and G silicon process technology to achieve th... See More ⇒

 5.3. Size:58K  ape
 ap09n20bgp-hf.pdf pdf_icon

AP09N20BGI-HF

AP09N20BGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G T... See More ⇒

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Detailed specifications: AP0903GM-HF, AP0903GYT-HF, AP0904GH-HF, AP0904GJB-HF, AP0904GJ-HF, AP0904GMT-HF, AP0904GYT-HF, AP09N20BGH-HF, P60NF06, AP09N20BGP-HF, AP09N20H-HF, AP09N20J-HF, AP09N50I, AP09N50I-HF, AP09N50P-HF, AP09N70I-A, AP09N70I-A-HF

Keywords - AP09N20BGI-HF MOSFET specs

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