All MOSFET. AP09N70I-A Datasheet

 

AP09N70I-A Datasheet and Replacement


   Type Designator: AP09N70I-A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220F
 

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AP09N70I-A Datasheet (PDF)

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 ap09n70i-a.pdf pdf_icon

AP09N70I-A

AP09N70I-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effe

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 ap09n70i-a-hf.pdf pdf_icon

AP09N70I-A

AP09N70I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-res

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 ap09n70i-h-hf.pdf pdf_icon

AP09N70I-A

AP09N70I-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 700V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8.3AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugg

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 ap09n70r-a.pdf pdf_icon

AP09N70I-A

AP09N70R-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AG RoHS CompliantSDescriptionAP09N70 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resistance an

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Datasheet: AP09N20BGH-HF , AP09N20BGI-HF , AP09N20BGP-HF , AP09N20H-HF , AP09N20J-HF , AP09N50I , AP09N50I-HF , AP09N50P-HF , RU7088R , AP09N70I-A-HF , AP09N70I-H-HF , AP09N70R-H , AP09N70P-H , AP09N70P-A , AP09N70R , AP09N70R-A-HF , AP09N90CW-HF .

History: ATP218 | WMK071N15HG2

Keywords - AP09N70I-A MOSFET datasheet

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