AP1001BSQ Datasheet and Replacement
Type Designator: AP1001BSQ
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 2.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 15
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 55
nS
Cossⓘ -
Output Capacitance: 295
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006
Ohm
Package: GREENFET-SQ
-
MOSFET ⓘ Cross-Reference Search
AP1001BSQ Datasheet (PDF)
..1. Size:104K ape
ap1001bsq.pdf 
AP1001BSQHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 6m Low Profile (
9.1. Size:132K ape
ap1005bsq.pdf
AP1005BSQHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 3.8m Low Profile (
9.2. Size:99K ape
ap1002bmx.pdf
AP1002BMXHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 1.8m Low Profile (
9.3. Size:158K ape
ap1003bst.pdf
AP1003BSTPreliminaryAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 4.7m Low Profile (
9.4. Size:133K ape
ap1004cmx.pdf
AP1004CMXHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ultra-low Forward Diode D BVDSS 30V Low Conductance Loss RDS(ON) 1.8m Low Profile (
9.5. Size:1583K cn apm
ap100n03p ap100n03t.pdf
AP100N03P/T30V N-Channel Enhancement Mode MOSFET Description The AP100N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS DR
9.6. Size:1377K cn apm
ap100n03ad.pdf
AP100N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP100N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS DR
9.7. Size:903K cn apm
ap100n04d.pdf
AP100N04D 40V N-Channel Enhancement Mode MOSFET Description The AP100N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100 A DS DR
9.8. Size:1461K cn apm
ap100n08d.pdf
AP100N08D 80V N-Channel Enhancement Mode MOSFET Description The AP100N08D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =100A DS DR
9.9. Size:1663K cn apm
ap100n03d.pdf
AP100N03D 30V N-Channel Enhancement Mode MOSFET Description The AP100N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS DR
9.10. Size:1322K cn apm
ap100n03y.pdf
AP100N03Y 30V N-Channel Enhancement Mode MOSFET Description The AP100N03Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS DR
9.11. Size:1150K cn apm
ap100p03d.pdf
AP100P03D -30V P-Channel Enhancement Mode MOSFET Description The AP100P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-100A DS DR
9.12. Size:1239K cn apm
ap100p02nf.pdf
AP100P02NF -20V P-Channel Enhancement Mode MOSFET Description The AP100P02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-100 A DS DR
9.13. Size:1911K cn apm
ap100p04d.pdf
AP100P04D -40V P-Channel Enhancement Mode MOSFET Description The AP100P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-100 A DS DR
9.14. Size:1319K cn apm
ap100n04nf.pdf
AP100N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP100N04NF uses advanced APM-SGT II technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100A DS DR
Datasheet: AP09N70P-A
, AP09N70R
, AP09N70R-A-HF
, AP09N90CW-HF
, AP09N90W
, AP09T10GH-HF
, AP09T10GK-HF
, AP09T10GP-HF
, 60N06
, AP1002BMX
, AP10N60W
, AP10N70I-A-HF
, AP10N70P
, AP10N70P-A
, AP10N70R-A
, AP10N70S
, AP10N70W
.
History: SFB077N150C2
| SRT045N025H
Keywords - AP1001BSQ MOSFET datasheet
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AP1001BSQ lookup
AP1001BSQ substitution
AP1001BSQ replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
