All MOSFET. AP10N60W Datasheet

 

AP10N60W MOSFET. Datasheet pdf. Equivalent

Type Designator: AP10N60W

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 156 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 475 pF

Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm

Package: TO3P

AP10N60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AP10N60W PDF doc:

1.1. ap10n60w.pdf Size:185K _a-power

AP10N60W
AP10N60W

AP10N60W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 600V Ў Fast Switching Characteristic RDS(ON) 0.75? Ў Simple Drive Requirement ID 10A G S Description AP10N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-3P type provide

5.1. ap10n70p_r-a-lf.pdf Size:102K _a-power

AP10N60W
AP10N60W

AP10N70R/P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 650V Ў Fast Switching Characteristic RDS(ON) 0.62? Ў Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90~265VAC off-line AC/DC converter applications.

5.2. ap10n70i-a-hf.pdf Size:59K _a-power

AP10N60W
AP10N60W

AP10N70I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 650V Ў Fast Switching Characteristic RDS(ON) 0.62? Ў Simple Drive Requirement ID 10A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized dev

5.3. ap10n70p-a.pdf Size:189K _a-power

AP10N60W
AP10N60W

AP10N70R/P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 650V Ў Fast Switching Characteristic RDS(ON) 0.6? Ў Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90~265VAC off-line AC/DC converter applications.B

5.4. ap10n70s.pdf Size:172K _a-power

AP10N60W
AP10N60W

AP10N70S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 600V Ў Fast Switching Characteristic RDS(ON) 0.6? Ў Simple Drive Requirement ID 10A G S Description AP10N70S is specially designed as main switching devices for universal G D 90~265VAC off-line AC/DC converter applications. TO-263 type provide high

5.5. ap10n70p.pdf Size:189K _a-power

AP10N60W
AP10N60W

AP10N70R/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 600V Ў Fast Switching Characteristic RDS(ON) 0.6? Ў Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90~265VAC off-line AC/DC converter applications.Bot

5.6. ap10n70w.pdf Size:222K _a-power

AP10N60W
AP10N60W

AP10N70W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 600V Ў Fast Switching Characteristic RDS(ON) 0.6? Ў Simple Drive Requirement ID 10A G S Description AP10N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-3P type provide

Datasheet: AP09N70R-A-HF , AP09N90CW-HF , AP09N90W , AP09T10GH-HF , AP09T10GK-HF , AP09T10GP-HF , AP1001BSQ , AP1002BMX , 2SK2837 , AP10N70I-A-HF , AP10N70P , AP10N70P-A , AP10N70R-A , AP10N70S , AP10N70W , AP10P10GH-HF , AP10P10GJ-HF .

 


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