AP10N70S Specs and Replacement

Type Designator: AP10N70S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 174 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.7 nS

Cossⓘ - Output Capacitance: 630 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO263

AP10N70S substitution

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AP10N70S datasheet

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 ap10n70s.pdf pdf_icon

AP10N70S

AP10N70S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description AP10N70S is specially designed as main switching devices for universal G D 90 265VAC off-line AC/DC converter applications. TO-263 type provid... See More ⇒

 7.1. Size:189K  ape
 ap10n70p.pdf pdf_icon

AP10N70S

AP10N70R/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90 265VAC off-line AC/DC converter applicati... See More ⇒

 7.2. Size:189K  ape
 ap10n70p-a.pdf pdf_icon

AP10N70S

AP10N70R/P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90 265VAC off-line AC/DC converter applica... See More ⇒

 7.3. Size:59K  ape
 ap10n70i-a-hf.pdf pdf_icon

AP10N70S

AP10N70I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged... See More ⇒

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Detailed specifications: AP09T10GP-HF, AP1001BSQ, AP1002BMX, AP10N60W, AP10N70I-A-HF, AP10N70P, AP10N70P-A, AP10N70R-A, IRF840, AP10N70W, AP10P10GH-HF, AP10P10GJ-HF, AP11N50I, 2SK3285, 2SK3287, 2SK3288, 2SK3289

Keywords - AP10N70S MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.