AP11N50I Specs and Replacement
Type Designator: AP11N50I
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 53 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
Package: TO220F
AP11N50I substitution
- MOSFET ⓘ Cross-Reference Search
AP11N50I datasheet
ap11n50i.pdf
AP11N50I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.62 Fast Switching Characteristic ID 11A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low G on-resistan... See More ⇒
ap11n50i-hf.pdf
AP11N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.68 Fast Switching Characteristic ID 11A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedize... See More ⇒
Detailed specifications: AP10N70I-A-HF, AP10N70P, AP10N70P-A, AP10N70R-A, AP10N70S, AP10N70W, AP10P10GH-HF, AP10P10GJ-HF, 50N06, 2SK3285, 2SK3287, 2SK3288, 2SK3289, 2SK3290, 2SK3304, 2SK3307, 2SK3310
Keywords - AP11N50I MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
