All MOSFET. AP11N50I Datasheet

 

AP11N50I Datasheet and Replacement


   Type Designator: AP11N50I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: TO220F
 

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AP11N50I Datasheet (PDF)

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AP11N50I

AP11N50IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.62 Fast Switching Characteristic ID 11AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowGon-resistan

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AP11N50I

AP11N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.68 Fast Switching Characteristic ID 11AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, ruggedize

Datasheet: AP10N70I-A-HF , AP10N70P , AP10N70P-A , AP10N70R-A , AP10N70S , AP10N70W , AP10P10GH-HF , AP10P10GJ-HF , 50N06 , 2SK3285 , 2SK3287 , 2SK3288 , 2SK3289 , 2SK3290 , 2SK3304 , 2SK3307 , 2SK3310 .

History: IRF6665PBF

Keywords - AP11N50I MOSFET datasheet

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