AP1203AGMT-HF Specs and Replacement
Type Designator: AP1203AGMT-HF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 27.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ -
Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PMPAK5X6
AP1203AGMT-HF substitution
- MOSFET ⓘ Cross-Reference Search
AP1203AGMT-HF datasheet
..1. Size:153K ape
ap1203agmt-hf.pdf 
AP1203AGMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 12m Low On-resistance ID 37A G RoHS Compliant S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi... See More ⇒
8.1. Size:95K ape
ap1203gh.pdf
AP1203GH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 37A G S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H) ruggedized device desi... See More ⇒
8.2. Size:199K ape
ap1203gm.pdf
AP1203GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 12m D Fast Switching Characteristic ID 11.2A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device de... See More ⇒
9.4. Size:1486K cn apm
ap120n04d.pdf
AP120N04D 40V N-Channel Enhancement Mode MOSFET Description The AP120N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R ... See More ⇒
9.5. Size:1444K cn apm
ap120n03nf.pdf
AP120N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP120N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R ... See More ⇒
9.6. Size:1687K cn apm
ap120p03d.pdf
AP120P03D -30V P-Channel Enhancement Mode MOSFET Description The AP120P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-120A DS D R ... See More ⇒
9.7. Size:1459K cn apm
ap120n10nf.pdf
AP120N10NF 100V N-Channel Enhancement Mode MOSFET Description The AP120N10NF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =120A DS D R ... See More ⇒
9.8. Size:1146K cn apm
ap120n02d.pdf
AP120N02D 20V N-Channel Enhancement Mode MOSFET Description The AP120N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =120A DS D R ... See More ⇒
9.9. Size:1517K cn apm
ap120n08nf.pdf
AP120N08NF 85V N-Channel Enhancement Mode MOSFET Description The AP120N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =120A DS D R ... See More ⇒
9.10. Size:2391K cn apm
ap120n08p ap120n08t.pdf
AP120N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP120N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =120A DS D R ... See More ⇒
9.11. Size:1322K cn apm
ap120n04p ap120n04t.pdf
AP120N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP120N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R ... See More ⇒
9.12. Size:1481K cn apm
ap120n03d.pdf
AP120N03D 30V N-Channel Enhancement Mode MOSFET Description The AP120N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R ... See More ⇒
9.13. Size:1371K cn apm
ap120n06p ap120n06t.pdf
AP120N06PIT 65V N-Channel Enhancement Mode MOSFET Description The AP120N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 65V I =125A DS D R ... See More ⇒
Detailed specifications: 2SK3288, 2SK3289, 2SK3290, 2SK3304, 2SK3307, 2SK3310, 2SK3314, 2SK3378, IRF3710, AP1332GEU-HF, AP1332GEV-HF, AP1333GU, AP1334GEU-HF, AP13N50I-HF, AP13N50R-HF, AP13N50W, AP13P15GH-HF
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