AP1203AGMT-HF Datasheet and Replacement
Type Designator: AP1203AGMT-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 27.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PMPAK5X6
AP1203AGMT-HF substitution
AP1203AGMT-HF Datasheet (PDF)
ap1203agmt-hf.pdf

AP1203AGMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 12m Low On-resistance ID 37AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi
ap1203gh.pdf

AP1203GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 37AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device desi
ap1203gm.pdf

AP1203GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 12mD Fast Switching Characteristic ID 11.2AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device de
Datasheet: 2SK3288 , 2SK3289 , 2SK3290 , 2SK3304 , 2SK3307 , 2SK3310 , 2SK3314 , 2SK3378 , P55NF06 , AP1332GEU-HF , AP1332GEV-HF , AP1333GU , AP1334GEU-HF , AP13N50I-HF , AP13N50R-HF , AP13N50W , AP13P15GH-HF .
History: 2SK3307 | FDPF8N60ZUT | SVSP80R180SE3
Keywords - AP1203AGMT-HF MOSFET datasheet
AP1203AGMT-HF cross reference
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History: 2SK3307 | FDPF8N60ZUT | SVSP80R180SE3



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