All MOSFET. AP15N03GJ-HF Datasheet

 

AP15N03GJ-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP15N03GJ-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22.5 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO251

 AP15N03GJ-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP15N03GJ-HF Datasheet (PDF)

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 ap15n03gj.pdf

AP15N03GJ-HF AP15N03GJ-HF

AP15N03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15AGSDescriptionGTO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount applications and suited for low voltage applicationssuch as

 6.1. Size:216K  ape
 ap15n03ghj-hf.pdf

AP15N03GJ-HF AP15N03GJ-HF

AP15N03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15AG RoHS CompliantSDescriptionGTO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount applications and suited for low voltage a

 6.2. Size:93K  ape
 ap15n03gi.pdf

AP15N03GJ-HF AP15N03GJ-HF

AP15N03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 15AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and

 6.3. Size:233K  ape
 ap15n03gh.pdf

AP15N03GJ-HF AP15N03GJ-HF

AP15N03GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15AG RoHS CompliantSDescriptionAP15N03 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-GDSTO-252(H)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRL630A

 

 
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