Справочник MOSFET. AP15N03GJ-HF

 

AP15N03GJ-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP15N03GJ-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 26 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 22.5 ns
   Cossⓘ - Выходная емкость: 107 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO251

 Аналог (замена) для AP15N03GJ-HF

 

 

AP15N03GJ-HF Datasheet (PDF)

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AP15N03GJ-HF
AP15N03GJ-HF

AP15N03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15AGSDescriptionGTO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount applications and suited for low voltage applicationssuch as

 6.1. Size:216K  ape
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AP15N03GJ-HF
AP15N03GJ-HF

AP15N03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15AG RoHS CompliantSDescriptionGTO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount applications and suited for low voltage a

 6.2. Size:93K  ape
ap15n03gi.pdf

AP15N03GJ-HF
AP15N03GJ-HF

AP15N03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 15AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and

 6.3. Size:233K  ape
ap15n03gh.pdf

AP15N03GJ-HF
AP15N03GJ-HF

AP15N03GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15AG RoHS CompliantSDescriptionAP15N03 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-GDSTO-252(H)

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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