All MOSFET. AP18T10AGH-HF Datasheet

 

AP18T10AGH-HF Datasheet and Replacement


   Type Designator: AP18T10AGH-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO252
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AP18T10AGH-HF Datasheet (PDF)

 4.1. Size:96K  ape
 ap18t10aghj-hf.pdf pdf_icon

AP18T10AGH-HF

AP18T10AGH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide theGDSdesigner with the best combination of fast

 5.1. Size:90K  ape
 ap18t10agk-hf.pdf pdf_icon

AP18T10AGH-HF

AP18T10AGK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 2.8AG Halogen Free & RoHS Compliant ProductSDDescriptionSAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast swit

 7.1. Size:94K  ape
 ap18t10gi.pdf pdf_icon

AP18T10AGH-HF

AP18T10GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100VD Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc

 7.2. Size:97K  ape
 ap18t10gh j-hf.pdf pdf_icon

AP18T10AGH-HF

AP18T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combinatio

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History: VBNC1303 | IRFS4010PBF

Keywords - AP18T10AGH-HF MOSFET datasheet

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