AP18T10AGH-HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP18T10AGH-HF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 27.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 55 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: TO252
- подбор MOSFET транзистора по параметрам
AP18T10AGH-HF Datasheet (PDF)
ap18t10aghj-hf.pdf

AP18T10AGH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide theGDSdesigner with the best combination of fast
ap18t10agk-hf.pdf

AP18T10AGK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 2.8AG Halogen Free & RoHS Compliant ProductSDDescriptionSAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast swit
ap18t10gi.pdf

AP18T10GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 100VD Single Drive Requirement RDS(ON) 160m Full Isolation Package ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc
ap18t10gh j-hf.pdf

AP18T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 160m Fast Switching Characteristic ID 9AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combinatio
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2SK3523-01R | UF830L-TQ2-T | MDH3331RP | ZXMP6A17E6TA | 2SK3013 | IXTX550N055T2 | HTB025N03
History: 2SK3523-01R | UF830L-TQ2-T | MDH3331RP | ZXMP6A17E6TA | 2SK3013 | IXTX550N055T2 | HTB025N03



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
bc516 | 2n3391 equivalent | a562 transistor | oc44 datasheet | 2sa70 | 2sa706 | 2sc539 | 2n5401 transistor equivalent