AP1R803GMT-HF Specs and Replacement

Type Designator: AP1R803GMT-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 170 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 97 nS

Cossⓘ - Output Capacitance: 785 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm

Package: PMPAK5X6

AP1R803GMT-HF substitution

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AP1R803GMT-HF datasheet

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 ap1r803gmt-hf.pdf pdf_icon

AP1R803GMT-HF

AP1R803GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 1.9m Low On-resistance ID 170A G RoHS Compliant S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge... See More ⇒

Detailed specifications: AP18T10AGK-HF, AP18T10GH-HF, AP18T10GI, AP18T10GJ-HF, AP18T10GM-HF, AP18T10GP, AP18T20GH-HF, AP18T20GI-HF, 20N60, AP1RA03GMT-HF, AP1RC03GMT-HF, 2SK357, 2SK359, 2SK360, 2SK3611, 2SK3614, 2SK3656

Keywords - AP1R803GMT-HF MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.