All MOSFET. AP1R803GMT-HF Datasheet

 

AP1R803GMT-HF Datasheet and Replacement


   Type Designator: AP1R803GMT-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 170 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 97 nS
   Cossⓘ - Output Capacitance: 785 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: PMPAK5X6
 

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AP1R803GMT-HF Datasheet (PDF)

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AP1R803GMT-HF

AP1R803GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 1.9m Low On-resistance ID 170AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge

Datasheet: AP18T10AGK-HF , AP18T10GH-HF , AP18T10GI , AP18T10GJ-HF , AP18T10GM-HF , AP18T10GP , AP18T20GH-HF , AP18T20GI-HF , 20N60 , AP1RA03GMT-HF , AP1RC03GMT-HF , 2SK357 , 2SK359 , 2SK360 , 2SK3611 , 2SK3614 , 2SK3656 .

History: MDS3651URH | 2SK3152 | AP98T03GP-HF | BLF6G27LS-135 | CS20N65W | 2SK3875-01 | AOT260L

Keywords - AP1R803GMT-HF MOSFET datasheet

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