2SK3740 PDF and Equivalents Search

 ..1. Size:169K  nec
 2sk3740.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3740 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3740 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching characteristics, designed for high voltage 2SK3740-ZK TO-263 (MP-25ZK) applications such as lamp drive, DC/DC converter, and actuator driv... See More ⇒

 ..2. Size:356K  inchange semiconductor
 2sk3740.pdf

isc N-Channel MOSFET Transistor 2SK3740 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.16 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 0.1. Size:295K  nec
 2sk3740-zk.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:296K  toshiba
 2sk3743.pdf

2SK3743 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3743 Unit mm Switching Regulator Applications Low drain-source ON resistance RDS (ON) = 0.29 (typ.) High forward transfer admittance Yfs = 5.8 S (typ.) Low leakage current IDSS = 100 A (max) (VDSS = 450 V) Enhancement-mode Vth = 3.0 5.0 V (VDS = 10 V, ID = 1 mA) Absolut... See More ⇒

 8.2. Size:219K  toshiba
 2sk3742.pdf

2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSIV) 2SK3742 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.2 (typ.) High forward transfer admittance Yfs = 3.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 720 V) Enhancement model Vth = 4.0 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxim... See More ⇒

 8.3. Size:51K  sanyo
 2sk3745ls.pdf

Ordering number EN8635 2SK3745LS N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3745LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Micaless package facilitating mounting. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Param... See More ⇒

 8.4. Size:52K  sanyo
 2sk3748.pdf

Ordering number ENN8250A 2SK3748 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3748 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=2... See More ⇒

 8.5. Size:219K  sanyo
 2sk3748-1e.pdf

2SK3748 Ordering number EN8250B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3748 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process) Attachment workability is good by Mica-less package Avalanche resistance guarantee Specifications a... See More ⇒

 8.6. Size:52K  sanyo
 2sk3747.pdf

Ordering number ENN7767A 2SK3747 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3747 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=2... See More ⇒

 8.7. Size:51K  sanyo
 2sk3746.pdf

Ordering number ENN8283 2SK3746 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching 2SK3746 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-So... See More ⇒

 8.8. Size:103K  nec
 2sk3749.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3749 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG PACKAGE DRAWING (Unit mm) DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because 2.1 0.1 1.25 0.1 it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an 2 actuator for low-current portable systems such as ... See More ⇒

 8.9. Size:261K  onsemi
 2sk3745ls.pdf

Ordering number EN8635A 2SK3745LS N-Channel Power MOSFET http //onsemi.com 1500V, 2A, 13 , TO-220F-3FS Features Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process) Micaless package facilitating mounting Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol C... See More ⇒

 8.10. Size:238K  onsemi
 2sk3747.pdf

Ordering number EN7767B 2SK3747 N-Channel Power MOSFET http //onsemi.com 1500V, 2A, 13 , TO-3PF-3L Features Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process) Attachment workability is good by Mica-less package Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25 C Parameter... See More ⇒

 8.11. Size:241K  onsemi
 2sk3746.pdf

Ordering number EN8283A 2SK3746 N-Channel Power MOSFET http //onsemi.com 1500V, 2A, 13 , TO-3P-3L Features Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process) Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V... See More ⇒

 8.12. Size:31K  panasonic
 2sk374.pdf

Silicon Junction FETs (Small Signal) 2SK374 2SK374 Silicon N-Channel Junction Unit mm For low-frequency amplification +0.2 2.8 0.3 For switching +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low noise-figure (NF) High gate-drain voltage VGDO 3 Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available. Absolute Ma... See More ⇒

 8.13. Size:279K  inchange semiconductor
 2sk3745ls.pdf

isc N-Channel MOSFET Transistor 2SK3745LS FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 1500V(Min) DSS Static Drain-Source On-Resistance R = 13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒

 8.14. Size:275K  inchange semiconductor
 2sk3748.pdf

isc N-Channel MOSFET Transistor 2SK3748 FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage V = 1500V(Min) DSS Static Drain-Source On-Resistance R = 7.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 8.15. Size:273K  inchange semiconductor
 2sk3747.pdf

isc N-Channel MOSFET Transistor 2SK3747 FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 1500V(Min) DSS Static Drain-Source On-Resistance R = 13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 8.16. Size:302K  inchange semiconductor
 2sk3746.pdf

isc N-Channel MOSFET Transistor 2SK3746 FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 1500V(Min) DSS Static Drain-Source On-Resistance R = 13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 8.17. Size:240K  inchange semiconductor
 2sk3742.pdf

isc N-Channel MOSFET Transistor 2SK3742 I2SK3742 FEATURES Low drain-source on-resistance RDS(on) 2.5 . Enhancement mode Vth = 4.0 to 5.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒