DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3740SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3740 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching characteristics, designed for high voltage 2SK3740-ZK TO-263 (MP-25ZK)applications such as lamp drive, DC/DC converter, and actuator driv

isc N-Channel MOSFET Transistor 2SK3740FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.16(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3743 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3743 Unit: mmSwitching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.29 (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDSS = 450 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolut

2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3742 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement model: Vth = 4.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxim

Ordering number : EN8635 2SK3745LSN-Channel Silicon MOSFETHigh-Voltage, High-Speed Switching2SK3745LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Micaless package facilitating mounting. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParam

Ordering number : ENN8250A 2SK3748N-Channel Silicon MOSFETHigh-Voltage, High-Speed Switching2SK3748ApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=2

2SK3748Ordering number : EN8250BSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETHigh-Voltage, High-Speed Switching2SK3748ApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process) Attachment workability is good by Mica-less package Avalanche resistance guaranteeSpecifications a

Ordering number : ENN7767A 2SK3747N-Channel Silicon MOSFETHigh-Voltage, High-Speed Switching2SK3747ApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=2

Ordering number : ENN8283 2SK3746N-Channel Silicon MOSFETHigh-Voltage, High-Speed Switching2SK3746ApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-So

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3749N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because 2.1 0.11.25 0.1it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an 2actuator for low-current portable systems such as

Ordering number : EN8635A2SK3745LSN-Channel Power MOSFEThttp://onsemi.com1500V, 2A, 13 , TO-220F-3FSFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process) Micaless package facilitating mounting Avalanche resistance guaranteeSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol C

Ordering number : EN7767B2SK3747N-Channel Power MOSFEThttp://onsemi.com1500V, 2A, 13 , TO-3PF-3LFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process) Attachment workability is good by Mica-less package Avalanche resistance guaranteeSpecificationsAbsolute Maximum Ratings at Ta=25CParameter

Ordering number : EN8283A2SK3746N-Channel Power MOSFEThttp://onsemi.com1500V, 2A, 13 , TO-3P-3LFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process) Avalanche resistance guaranteeSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V

Silicon Junction FETs (Small Signal) 2SK3742SK374Silicon N-Channel JunctionUnit : mmFor low-frequency amplification+0.22.8 0.3For switching +0.250.65 0.15 1.5 0.05 0.65 0.15 Features1 Low noise-figure (NF) High gate-drain voltage VGDO3 Downsizing of sets by mini-type package and automatic insertion by2taping/magazine packing are available. Absolute Ma

isc N-Channel MOSFET Transistor 2SK3745LSFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 13(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

isc N-Channel MOSFET Transistor 2SK3748FEATURESDrain Current : I = 4.0A@ T =25D CDrain Source Voltage: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor 2SK3747FEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 13(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3746FEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 13(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3742I2SK3742FEATURESLow drain-source on-resistance:RDS(on) 2.5.Enhancement mode:Vth = 4.0 to 5.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER