AP22N13GH-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP22N13GH-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 89.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 135 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 22.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 280 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO252
AP22N13GH-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP22N13GH-HF Datasheet (PDF)
..1. Size:119K ape
ap22n13gh-hf.pdf
ap22n13gh-hf.pdf
AP22N13GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 135V Lower On-resistance RDS(ON) 75m Fast Switching Characteristic ID 22.4AG Halogen Free & RoHS Compliant ProductSDescriptionAP22N13 series are from Advanced Power innovated design and siliconGDprocess technology to
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