AP22N13GH-HF Specs and Replacement
Type Designator: AP22N13GH-HF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 89.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 135 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 280 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO252
AP22N13GH-HF substitution
- MOSFET ⓘ Cross-Reference Search
AP22N13GH-HF datasheet
ap22n13gh-hf.pdf
AP22N13GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 135V Lower On-resistance RDS(ON) 75m Fast Switching Characteristic ID 22.4A G Halogen Free & RoHS Compliant Product S Description AP22N13 series are from Advanced Power innovated design and silicon G D process technology to... See More ⇒
Detailed specifications: AP20N15GH-HF, AP20N15GI-HF, AP20T03GH-HF, AP20T03GJ-HF, AP20T03GT-HF, AP20T15GH-HF, AP20T15GI-HF, AP20T15GP-HF, K4145, AP22T03GH-HF, AP2301AGN-HF, AP2301BGN-HF, AP2301GN-HF, AP2301N-HF, AP2302AGN-HF, AP2302GN-HF, AP2303GN-HF
Keywords - AP22N13GH-HF MOSFET specs
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