AP2306AGEN-HF Specs and Replacement

Type Designator: AP2306AGEN-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT23

AP2306AGEN-HF substitution

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AP2306AGEN-HF datasheet

 ..1. Size:95K  ape
ap2306agen-hf.pdf pdf_icon

AP2306AGEN-HF

AP2306AGEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1A S RoHS Compliant & Halogen-Free SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to D achieve the lowest possible on-res... See More ⇒

 4.1. Size:179K  ape
ap2306agen.pdf pdf_icon

AP2306AGEN-HF

AP2306AGEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1A S RoHS Compliant & Halogen-Free SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to D achieve the lowest possible on-res... See More ⇒

 6.1. Size:69K  ape
ap2306agn.pdf pdf_icon

AP2306AGEN-HF

AP2306AGN Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 30V Lower on-resistance D RDS(ON) 35m Surface mount package ID 5A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible ... See More ⇒

 6.2. Size:106K  ape
ap2306agn-hf.pdf pdf_icon

AP2306AGEN-HF

AP2306AGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 30V Lower on-resistance D RDS(ON) 35m Surface mount package ID 5A RoHS Compliant S D SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques G to achieve the lowest possible on-resistance, extreme... See More ⇒

Detailed specifications: AP2303GN-HF, AP2304AGN-HF, AP2304GN-HF, AP2305AGN-HF, AP2305BGN-HF, AP2305CGN-HF, AP2305GN-HF, AP2305N-HF, BS170, AP2306AGN-HF, AP2306CGN-HF, AP2306CGTN-HF, AP2306GN-HF, AP2307GN-HF, 2SK3779-01R, 2SK3793, 2SK3794

Keywords - AP2306AGEN-HF MOSFET specs

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