2SK3863
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3863
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 70
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.35
Ohm
Package:
SC64
2SK3863
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3863
Datasheet (PDF)
..1. Size:297K toshiba
2sk3863.pdf 
2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3863 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu
..2. Size:286K inchange semiconductor
2sk3863.pdf
isc N-Channel MOSFET Transistor 2SK3863FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.1. Size:250K toshiba
2sk3869.pdf
2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3869 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxi
8.2. Size:234K toshiba
2sk3868.pdf
2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3868 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum R
8.3. Size:196K toshiba
2sk3864.pdf
2SK3864 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3864 PDP Sustain Circuit Applications Unit: mmSwitching Regulator Applications Low drain-source ON resistance: RDS (ON) = 20 m (typ.) High forward transfer admittance: |Yfs| = 75 S (typ.) Low leakage current: IDSS = 100 A (max) (VDSS = 120 V) Enhancement mode: Vth = 2.0~4.0 V
8.5. Size:284K inchange semiconductor
2sk386.pdf
isc N-Channel MOSFET Transistor 2SK386FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
8.6. Size:280K inchange semiconductor
2sk3869.pdf
isc N-Channel MOSFET Transistor 2SK3869FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.68(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.7. Size:279K inchange semiconductor
2sk3868.pdf
isc N-Channel MOSFET Transistor 2SK3868FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: AP2306GN-HF
, AP2307GN-HF
, 2SK3779-01R
, 2SK3793
, 2SK3794
, 2SK3794-Z
, 2SK385
, 2SK386
, EMB04N03H
, 2SK3864
, 2SK3868
, 2SK3879
, 2SK389
, 2SK3906
, 2SK3929-01MR
, 2SK3931-01
, 2SK3932-01MR
.
