2SK3863 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK3863
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 16 nC
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 70 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.35 Ohm
Тип корпуса: SC64
2SK3863 Datasheet (PDF)
2sk3863.pdf

2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3863 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu
2sk3863.pdf

isc N-Channel MOSFET Transistor 2SK3863FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3869.pdf

2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3869 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxi
2sk3868.pdf

2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3868 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum R
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: BL4N80-U | KP744A | NTR4170NT1G | NCEAP60T12AD | IRF3710ZL | SDD02N60 | IRL3715PBF
History: BL4N80-U | KP744A | NTR4170NT1G | NCEAP60T12AD | IRF3710ZL | SDD02N60 | IRL3715PBF



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