AP2317GN-HF Specs and Replacement

Type Designator: AP2317GN-HF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: SOT23

AP2317GN-HF substitution

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AP2317GN-HF datasheet

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AP2317GN-HF

AP2317GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 52m D Surface Mount Device ID - 4.2A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resist... See More ⇒

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AP2317GN-HF

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AP2317GN-HF

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AP2317GN-HF

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Detailed specifications: AP2310GN-HF, AP2311GK-HF, AP2311GN-HF, AP2312GN, AP2313GN-HF, AP2314GN-HF, AP2315GEN, AP2316GN-HF, 60N06, AP2318AGEN-HF, AP2318GEN-HF, AP2319GN-HF, AP2321GN-HF, AP2323GN-HF, AP2324GN-HF, AP2325GEN-HF, AP2326GN-HF

Keywords - AP2317GN-HF MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.