AP2331GN-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP2331GN-HF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.38 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 1 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 7 nS
Drain-Source Capacitance (Cd): 26 pF
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: SOT23
AP2331GN-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP2331GN-HF Datasheet (PDF)
1.1. ap2331gn-hf.pdf 
Size:59K _a-power
AP2331GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS -60V D Ў Small Package Outline RDS(ON) 0.8? Ў Surface Mount Device ID - 1A S Ў RoHS Compliant & Halogen-Free SOT-23 G Description D AP2331 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos
5.1. ap2332gen-hf.pdf Size:56K _a-power
AP2332GEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 600V D Ў Small Package Outline RDS(ON) 72? Ў Surface Mount Device ID 51mA S Ў Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing G techniques to achieve the lowest possible on-res
5.2. ap2336gn-hf.pdf Size:93K _a-power
AP2336GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 60V ▼ Small Package Outline RDS(ON) 90mΩ ▼ Surface Mount Device ID 2.8A G ▼ RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ext
5.3. ap2332gn-hf.pdf Size:91K _a-power
AP2332GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 600V D Ў Small Package Outline RDS(ON) 300? Ў Surface Mount Device ID 27mA S Ў Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible on-res
5.4. ap2338gn-hf.pdf Size:95K _a-power
AP2338GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Capable of 1.8V Gate Drive BVDSS 30V D Ў Small Outline Package RDS(ON) 35m? Ў Surface Mount Device ID 5A S Ў Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resista
5.5. ap2338gn.pdf Size:177K _a-power
AP2338GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Capable of 1.8V Gate Drive BVDSS 30V D ▼ Small Outline Package RDS(ON) 35mΩ ▼ Surface Mount Device ID 5A S ▼ Halogen Free & RoHS Compliant Product SOT-23 G D Description AP2338 series are from Advanced Power innovated design and silicon process technology to achieve
5.6. ap2333en-hf.pdf Size:57K _a-power
AP2333EN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Capable of 1.8V Gate Drive BVDSS -20V D ▼ Small Package Outline RDS(ON) 80mΩ ▼ Surface Mount Device ID -2.9A S ▼ RoHS Compliant & Halogen-Free SOT-23S G D Description AP2333 series are from Advanced Power innovated design and G silicon process technology to achiev
5.7. ap2330gn.pdf Size:175K _a-power
AP2330GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 90V ▼ Small Package Outline RDS(ON) 240mΩ ▼ Surface Mount Device ID 1.7A G ▼ RoHS Compliant & Halogen-Free S D Description AP2330 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos
5.8. ap2334gn-hf.pdf Size:57K _a-power
AP2334GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Fast Switching Characteristic BVDSS 30V D Ў Lower Gate Charge RDS(ON) 28m? Ў Small Footprint & Low Profile Package ID 5.6A S Ў RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible
5.9. ap2330gn-hf.pdf Size:93K _a-power
AP2330GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 90V Ў Small Package Outline RDS(ON) 240m? Ў Surface Mount Device ID 1.7A G Ў RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs utilized advanced processing techniques to S achieve the lowest possible on-resistance, extreme
Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .
