AP2348GN-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP2348GN-HF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.38
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 1.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 3
nC
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 30
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package:
SOT23
AP2348GN-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP2348GN-HF
Datasheet (PDF)
..1. Size:91K ape
ap2348gn-hf.pdf 
AP2348GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Small Package Outline RDS(ON) 300m Surface Mount Device ID 1.5AG RoHS Compliant & Halogen-FreeSDDescriptionAP2348 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
9.1. Size:57K ape
ap2344gen-hf.pdf
AP2344GEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 23m Fast Switching Performance ID 6.2AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2344 series are from Advanced Power innovated design and siliconGprocess technology to achiev
9.2. Size:55K ape
ap2346gn-hf.pdf
AP2346GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 21m Fast Switching Performance ID 6.5AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2346 series are from Advanced Power innovated design and siliconprocess technology to achieve th
9.3. Size:61K ape
ap2342gk-hf.pdf
AP2342GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 2S Fast Switching Characteristic ID 590mAD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast swit
9.4. Size:55K ape
ap2344gn-hf.pdf
AP2344GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 22m Fast Switching Performance ID 6.4AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2344 series are from Advanced Power innovated design and siliconprocess technology to achieve th
9.5. Size:138K ape
ap2344gn.pdf
AP2344GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 22m Fast Switching Performance ID 6.4AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2344 series are from Advanced Power innovated design and siliconprocess technology to achieve th
9.6. Size:138K ape
ap2346gn.pdf
AP2346GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 21m Fast Switching Performance ID 6.5AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2346 series are from Advanced Power innovated design and siliconprocess technology to achieve th
9.7. Size:56K ape
ap2340gn-hf.pdf
AP2340GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 30VD Lower Gate Charge RDS(ON) 80m Small Footprint & Low Profile Package ID 3.4AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest
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