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FK20SM-9 Specs and Replacement


   Type Designator: FK20SM-9
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 275 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 2800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO3P
 

 FK20SM-9 substitution

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FK20SM-9 Specs

 7.1. Size:258K  inchange semiconductor
 fk20sm-10.pdf pdf_icon

FK20SM-9

isc N-Channel MOSFET Transistor FK20SM-10 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 360m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

Detailed specifications: FK18SM-10 , FK18SM-12 , FK18SM-9 , FK20KM-5 , FK20KM-6 , FK20SM-10 , FK20SM-5 , FK20SM-6 , IRF740 , FK20UM-5 , FK20UM-6 , FK20VS-5 , FK20VS-6 , FK25SM-5 , FK25SM-6 , FK30SM-5 , FK30SM-6 .

Keywords - FK20SM-9 MOSFET specs

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