All MOSFET. AP25N10GH-HF Datasheet

 

AP25N10GH-HF Datasheet and Replacement


   Type Designator: AP25N10GH-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO252
 

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AP25N10GH-HF Datasheet (PDF)

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 ap25n10gh-hf ap25n10gj-hf.pdf pdf_icon

AP25N10GH-HF

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design

 5.1. Size:238K  ape
 ap25n10gh.pdf pdf_icon

AP25N10GH-HF

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionAP25N10 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possible on-resistance andDS

 6.1. Size:100K  ape
 ap25n10gp-hf ap25n10gs-hf.pdf pdf_icon

AP25N10GH-HF

AP25N10GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GTO-220

 7.1. Size:746K  ncepower
 nceap25n10ak.pdf pdf_icon

AP25N10GH-HF

http://www.ncepower.comNCEAP25N10AKNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP25N10AK uses Super Trench II technology that is V =100V,I =37ADS Duniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =26m (typical) @ V =4.5

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Datasheet: 2SK417 , AP2451GY-HF , AP2530AGY-HF , AP2530GY-HF , AP2531GY , AP2532GY , AP2533GY-HF , AP2535GEY-HF , IRF9540N , AP25N10GJ-HF , AP25N10GP-HF , AP25N10GS-HF , AP25P15GI , AP25P15GS-HF , AP2602GY , AP2603GY-HF , AP2604GY-HF .

History: WM03DN85A | SQJ964EP

Keywords - AP25N10GH-HF MOSFET datasheet

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