AP25N10GH-HF Specs and Replacement

Type Designator: AP25N10GH-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO252

AP25N10GH-HF substitution

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AP25N10GH-HF datasheet

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 ap25n10gh-hf ap25n10gj-hf.pdf pdf_icon

AP25N10GH-HF

AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23A G S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design... See More ⇒

 5.1. Size:238K  ape
 ap25n10gh.pdf pdf_icon

AP25N10GH-HF

AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23A G S Description AP25N10 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible on-resistance and D S... See More ⇒

 6.1. Size:100K  ape
 ap25n10gp-hf ap25n10gs-hf.pdf pdf_icon

AP25N10GH-HF

AP25N10GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220... See More ⇒

 7.1. Size:746K  ncepower
 nceap25n10ak.pdf pdf_icon

AP25N10GH-HF

http //www.ncepower.com NCEAP25N10AK NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP25N10AK uses Super Trench II technology that is V =100V,I =37A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =26m (typical) @ V =4.5... See More ⇒

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Detailed specifications: 2SK417, AP2451GY-HF, AP2530AGY-HF, AP2530GY-HF, AP2531GY, AP2532GY, AP2533GY-HF, AP2535GEY-HF, SKD502T, AP25N10GJ-HF, AP25N10GP-HF, AP25N10GS-HF, AP25P15GI, AP25P15GS-HF, AP2602GY, AP2603GY-HF, AP2604GY-HF

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