AP25N10GH-HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP25N10GH-HF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 96 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 28 ns
Cossⓘ - Выходная емкость: 270 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
Тип корпуса: TO252
Аналог (замена) для AP25N10GH-HF
AP25N10GH-HF Datasheet (PDF)
ap25n10gh-hf ap25n10gj-hf.pdf

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design
ap25n10gh.pdf

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionAP25N10 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possible on-resistance andDS
ap25n10gp-hf ap25n10gs-hf.pdf

AP25N10GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GTO-220
nceap25n10ak.pdf

http://www.ncepower.comNCEAP25N10AKNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP25N10AK uses Super Trench II technology that is V =100V,I =37ADS Duniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =26m (typical) @ V =4.5
Другие MOSFET... 2SK417 , AP2451GY-HF , AP2530AGY-HF , AP2530GY-HF , AP2531GY , AP2532GY , AP2533GY-HF , AP2535GEY-HF , IRF9540N , AP25N10GJ-HF , AP25N10GP-HF , AP25N10GS-HF , AP25P15GI , AP25P15GS-HF , AP2602GY , AP2603GY-HF , AP2604GY-HF .
History: AONR21357 | 2SK2977LS
History: AONR21357 | 2SK2977LS



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