AP2851GO MOSFET. Datasheet pdf. Equivalent

   Type Designator: AP2851GO
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 5(3.3) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 7(6) nS
   Cossⓘ - Output Capacitance: 100(90) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04(0.08) Ohm
   Package: TSSOP8

AP2851GO Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS