All MOSFET. AP2RA04GMT-HF Datasheet

 

AP2RA04GMT-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP2RA04GMT-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 615 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: PMPAK5X6

 AP2RA04GMT-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP2RA04GMT-HF Datasheet (PDF)

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 ap2ra04gmt-hf.pdf

AP2RA04GMT-HF AP2RA04GMT-HF

AP2RA04GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 2.9m Low On-resistance ID 130AG RoHS Compliant & Halogen-FreeSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switchin

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