All MOSFET. AP2RA04GMT-HF Datasheet

 

AP2RA04GMT-HF Datasheet and Replacement


   Type Designator: AP2RA04GMT-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 615 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: PMPAK5X6
 

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AP2RA04GMT-HF Datasheet (PDF)

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AP2RA04GMT-HF

AP2RA04GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 2.9m Low On-resistance ID 130AG RoHS Compliant & Halogen-FreeSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switchin

Datasheet: AP2852GO , AP2864I-A-HF , AP2N7002K-HF , AP2R403AGMT-HF , AP2R403GMT-HF , AP2R803AGMT-HF , AP2R803GH-HF , AP2R803GMT-HF , IRF740 , AP30N30W , AP30N30WI , AP30P10GH-HF , AP30P10GI , AP30P10GP-HF , AP30P10GS , AP30T03GH-HF , AP30T10GH-HF .

History: CTLM8110-M832D | HSS2306A

Keywords - AP2RA04GMT-HF MOSFET datasheet

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