All MOSFET. AP2RA04GMT-HF Datasheet

 

AP2RA04GMT-HF Datasheet and Replacement


   Type Designator: AP2RA04GMT-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 615 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: PMPAK5X6
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AP2RA04GMT-HF Datasheet (PDF)

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AP2RA04GMT-HF

AP2RA04GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 2.9m Low On-resistance ID 130AG RoHS Compliant & Halogen-FreeSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switchin

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2P771A-5 | IRFR3418PBF | NCEP1580 | 1N65L-T60-K | AP3R303GMT-HF | BSS315P | NP80N03MDE

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