AP2RA04GMT-HF Specs and Replacement

Type Designator: AP2RA04GMT-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 615 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: PMPAK5X6

AP2RA04GMT-HF substitution

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AP2RA04GMT-HF datasheet

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 ap2ra04gmt-hf.pdf pdf_icon

AP2RA04GMT-HF

AP2RA04GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 2.9m Low On-resistance ID 130A G RoHS Compliant & Halogen-Free S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switchin... See More ⇒

Detailed specifications: AP2852GO, AP2864I-A-HF, AP2N7002K-HF, AP2R403AGMT-HF, AP2R403GMT-HF, AP2R803AGMT-HF, AP2R803GH-HF, AP2R803GMT-HF, IRF740, AP30N30W, AP30N30WI, AP30P10GH-HF, AP30P10GI, AP30P10GP-HF, AP30P10GS, AP30T03GH-HF, AP30T10GH-HF

Keywords - AP2RA04GMT-HF MOSFET specs

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