AP3R303GMT-HF Datasheet and Replacement
Type Designator: AP3R303GMT-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 56.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 105 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 440 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: PMPAK5X6
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AP3R303GMT-HF Datasheet (PDF)
ap3r303gmt-hf.pdf

AP3R303GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID 105AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge
ap3r303gmt-l.pdf

AP3R303GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAP3R303 series are from Advanced Power innovated design and siliconprocess technology to achie
ap3r303gmt.pdf

AP3R303GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAP3R303 series are from Advanced Power innovated design and siliconprocess technology to achi
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: STL35N15F3 | SFS06R02UGF | FTK3341 | FDMC3612 | STK820 | 2SK1626 | 2SJ254
Keywords - AP3R303GMT-HF MOSFET datasheet
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History: STL35N15F3 | SFS06R02UGF | FTK3341 | FDMC3612 | STK820 | 2SK1626 | 2SJ254



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