2SK512 Specs and Replacement

Type Designator: 2SK512

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO3

2SK512 substitution

- MOSFET ⓘ Cross-Reference Search

 

2SK512 datasheet

 ..1. Size:206K  hitachi
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2SK512

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 ..2. Size:276K  inchange semiconductor
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2SK512

isc N-Channel MOSFET Transistor 2SK512 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 9.2. Size:40K  hitachi
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2SK512

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Detailed specifications: 2SK439, 2SK443, 2SK444, 2SK445, 2SK447, 2SK492, 2SK494, 2SK511, IRFP250, 2SK522, 2SK525, 2SK526, 2SK530, 2SK531, 2SK532, AP4034AGM-HF, AP4034AGYT-HF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.