2SK522 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK522
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.2 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 3 V
Maximum Drain Current |Id|: 0.02 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 125 Ohm
Package: SPAK
2SK522 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK522 说明书
1.1. 2sk522.pdf 
Size:36K _hitachi
2SK522 Silicon N-Channel Junction FET Application VHF amplifier, Mixer, local oscillator Outline SPAK 1. Gate 1 2 2. Source 3 3. Drain 2SK522 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain voltage VGDO –30 V Gate current IG 10 mA Drain current ID 20 mA Channel power dissipation Pch 200 mW Channel temperature Tch 150 ° C Storage temperature Tstg –55
5.1. 2sk526.pdf Size:133K _toshiba
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5.2. 2sk525.pdf Size:94K _toshiba
Datasheet: 2SK443 , 2SK444 , 2SK445 , 2SK447 , 2SK492 , 2SK494 , 2SK511 , 2SK512 , IRF640N , 2SK525 , 2SK526 , 2SK530 , 2SK531 , 2SK532 , AP4034AGM-HF , AP4034AGYT-HF , AP4034ASGYT-HF .
