All MOSFET. 2SK522 Datasheet

 

2SK522 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK522
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 3 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 0.02 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 125 Ohm
   Package: SPAK

 2SK522 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK522 Datasheet (PDF)

 ..1. Size:36K  hitachi
 2sk522.pdf

2SK522 2SK522

2SK522Silicon N-Channel Junction FETApplicationVHF amplifier, Mixer, local oscillatorOutlineSPAK1. Gate122. Source33. Drain2SK522Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitGate to drain voltage VGDO 30 VGate current IG 10 mADrain current ID 20 mAChannel power dissipation Pch 200 mWChannel temperature Tch 150 CStorage temperature T

 9.1. Size:515K  1
 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf

2SK522

 9.2. Size:133K  toshiba
 2sk526.pdf

2SK522 2SK522

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:94K  toshiba
 2sk525.pdf

2SK522 2SK522

 9.4. Size:55K  no
 2sk520.pdf

2SK522 2SK522

 9.5. Size:235K  inchange semiconductor
 2sk528.pdf

2SK522 2SK522

isc N-Channel MOSFET Transistor 2SK528DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c

 9.6. Size:234K  inchange semiconductor
 2sk526.pdf

2SK522 2SK522

isc N-Channel MOSFET Transistor 2SK526DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,such as off-line switching power supplies

 9.7. Size:234K  inchange semiconductor
 2sk525.pdf

2SK522 2SK522

isc N-Channel MOSFET Transistor 2SK525DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,such as off-line switching power supplies

 9.8. Size:235K  inchange semiconductor
 2sk529.pdf

2SK522 2SK522

isc N-Channel MOSFET Transistor 2SK529DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =450V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SMK630F

 

 
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