All MOSFET. AP4420GJ Datasheet

 

AP4420GJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP4420GJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 52 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO251

 AP4420GJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP4420GJ Datasheet (PDF)

 ..1. Size:93K  ape
ap4420gh ap4420gj.pdf

AP4420GJ
AP4420GJ

AP4420GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 35V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic G ID 52AS RoHS CompliantDescriptionThe Advanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switching,TO-252(H

 9.1. Size:171K  ape
ap4423gm.pdf

AP4420GJ
AP4420GJ

AP4423GM-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 15mD Fast Switching Characteristic ID -11AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4423 series are from

 9.2. Size:60K  ape
ap4426gm-hf.pdf

AP4420GJ
AP4420GJ

AP4426GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 6.5mD Low On-resistance ID 16AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

 9.3. Size:93K  ape
ap4429gm-hf.pdf

AP4420GJ
AP4420GJ

AP4429GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35VDDD Simple Drive Requirement RDS(ON) 5mD Fast Switching Characteristic ID 18AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination o

 9.4. Size:118K  ape
ap4425go.pdf

AP4420GJ
AP4420GJ

AP4425GORoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Small & Thin Package D BVDSS -20VSSD Fast Switching Characteristic RDS(ON) 42mGS Capable of 1.8V Gate Drive ID -4.2ASTSSOP-8DDDescriptionGThe Advanced Power MOSFETs from APEC provide theSdesigner with the best combination of fast switching,ru

 9.5. Size:93K  ape
ap4424agm.pdf

AP4420GJ
AP4420GJ

AP4424AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 9mD Fast Switching Characteristic ID 13AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device desi

 9.6. Size:247K  ape
ap4428gm.pdf

AP4420GJ
AP4420GJ

AP4428GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 6mD Low On-resistance ID 16AGSSSSO-8DescriptionDThe Advanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device de

 9.7. Size:219K  ape
ap4424gm.pdf

AP4420GJ
AP4420GJ

AP4424GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Low On-resistance RDS(ON) 9mD Fast Switching Characteristic ID 13.8AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device desi

 9.8. Size:197K  ape
ap4427gm.pdf

AP4420GJ
AP4420GJ

AP4427GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 35VDDD Fast Switching Characteristic RDS(ON) 6.6mD RoHS Compliant ID 16AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device des

 9.9. Size:96K  ape
ap4424gm-hf.pdf

AP4420GJ
AP4420GJ

AP4424GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Low On-resistance RDS(ON) 9mD Fast Switching Characteristic ID 13.8AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

 9.10. Size:96K  ape
ap4423gm-hf.pdf

AP4420GJ
AP4420GJ

AP4423GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 15mD Fast Switching Characteristic ID -11AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of f

 9.11. Size:170K  ape
ap4426gm.pdf

AP4420GJ
AP4420GJ

AP4426GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 6.5mD Low On-resistance ID 16AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4426 series are from A

 9.12. Size:197K  ape
ap4425gm.pdf

AP4420GJ
AP4420GJ

AP4425GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 35VDDD Fast Switching Characteristic RDS(ON) 9mD RoHS Compliant ID 13AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design,

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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