AP4420GJ
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP4420GJ
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 45
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 35
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 52
A
Tj ⓘ - Максимальная температура канала: 150
°C
Qg ⓘ -
Общий заряд затвора: 16
nC
tr ⓘ -
Время нарастания: 74
ns
Cossⓘ - Выходная емкость: 320
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01
Ohm
Тип корпуса:
TO251
Аналог (замена) для AP4420GJ
-
подбор ⓘ MOSFET транзистора по параметрам
AP4420GJ
Datasheet (PDF)
..1. Size:93K ape
ap4420gh ap4420gj.pdf 
AP4420GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 35V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic G ID 52AS RoHS CompliantDescriptionThe Advanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switching,TO-252(H
9.1. Size:171K ape
ap4423gm.pdf 
AP4423GM-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 15mD Fast Switching Characteristic ID -11AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4423 series are from
9.2. Size:60K ape
ap4426gm-hf.pdf 
AP4426GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 6.5mD Low On-resistance ID 16AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa
9.3. Size:93K ape
ap4429gm-hf.pdf 
AP4429GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35VDDD Simple Drive Requirement RDS(ON) 5mD Fast Switching Characteristic ID 18AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination o
9.4. Size:118K ape
ap4425go.pdf 
AP4425GORoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Small & Thin Package D BVDSS -20VSSD Fast Switching Characteristic RDS(ON) 42mGS Capable of 1.8V Gate Drive ID -4.2ASTSSOP-8DDDescriptionGThe Advanced Power MOSFETs from APEC provide theSdesigner with the best combination of fast switching,ru
9.5. Size:93K ape
ap4424agm.pdf 
AP4424AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 9mD Fast Switching Characteristic ID 13AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device desi
9.6. Size:247K ape
ap4428gm.pdf 
AP4428GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 6mD Low On-resistance ID 16AGSSSSO-8DescriptionDThe Advanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device de
9.7. Size:219K ape
ap4424gm.pdf 
AP4424GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Low On-resistance RDS(ON) 9mD Fast Switching Characteristic ID 13.8AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device desi
9.8. Size:197K ape
ap4427gm.pdf 
AP4427GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 35VDDD Fast Switching Characteristic RDS(ON) 6.6mD RoHS Compliant ID 16AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device des
9.9. Size:96K ape
ap4424gm-hf.pdf 
AP4424GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Low On-resistance RDS(ON) 9mD Fast Switching Characteristic ID 13.8AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa
9.10. Size:96K ape
ap4423gm-hf.pdf 
AP4423GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 15mD Fast Switching Characteristic ID -11AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of f
9.11. Size:170K ape
ap4426gm.pdf 
AP4426GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 6.5mD Low On-resistance ID 16AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4426 series are from A
9.12. Size:197K ape
ap4425gm.pdf 
AP4425GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 35VDDD Fast Switching Characteristic RDS(ON) 9mD RoHS Compliant ID 13AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design,
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