AP4506GEM-HF Datasheet and Replacement
Type Designator: AP4506GEM-HF
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 6.4(6) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 8.3 nC
tr ⓘ - Rise Time: 5.6 nS
Cossⓘ - Output Capacitance: 100(220) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03(0.04) Ohm
Package: SO8
AP4506GEM-HF substitution
AP4506GEM-HF Datasheet (PDF)
ap4506gem-hf.pdf

AP4506GEM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement D2 N-CH BVDSS 30VD2D1 Low On-resistance RDS(ON) 30mD1 Fast Switching Performance ID 6.4AG2S2 RoHS Compliant P-CH BVDSS -30VG1SO-8 S1RDS(ON) 40mDescription ID -6AAdvanced Power MOSFETs from APEC provide thedesi
ap4506gem.pdf

AP4506GEM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 N-CH BVDSS 30V Simple Drive Requirement D2D1 RDS(ON) 30m Low On-resistance D1 ID 6.4A Fast Switching Performance G2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1SO-8 S1RDS(ON
ap4506geh-hf.pdf

AP4506GEH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD1/D2 Good Thermal Performance RDS(ON) 24m Fast Switching Performance ID 9AS1G1S2 RoHS Compliant P-CH BVDSS -30VG2RDS(ON) 36mTO-252-4LDescription ID -8AAdvanced Power MOSFETs from APEC provide thede
ap4506geh.pdf

AP4506GEHRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD1/D2 Good Thermal Performance RDS(ON) 24m Fast Switching Performance ID 9AS1G1S2P-CH BVDSS -30VG2RDS(ON) 36mTO-252-4LDescription ID -8AAdvanced Power MOSFETs from APEC provide thedesigner with the best
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