AP4506GEM-HF MOSFET. Datasheet pdf. Equivalent

   Type Designator: AP4506GEM-HF
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6.4(6) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.3 nC
   trⓘ - Rise Time: 5.6 nS
   Cossⓘ - Output Capacitance: 100(220) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03(0.04) Ohm
   Package: SO8

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