FRE9260D MOSFET. Datasheet pdf. Equivalent
Type Designator: FRE9260D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 19 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 700 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: TO258AA
FRE9260D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRE9260D Datasheet (PDF)
fre9260.pdf
FRE9260D, FRE9260R,FRE9260H19A, -200V, 0.210 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 19A, -200V, RDS(on) = 0.210TO-258AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(SI)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD
Datasheet: FRE264H , FRE264R , FRE460D , FRE460H , FRE460R , FRE9160D , FRE9160H , FRE9160R , IRF1407 , FRE9260H , FRE9260R , FRF150D , FRF150H , FRF150R , FRF250D , FRF250H , FRF250R .
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